Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection
Vertically Oriented Topological Insulator Bi2Se3 Nanoplates on Silicon for Broadband Photodetection
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DOI：
10.1021/acs.jpcc.0c01978
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发表时间：
2020-05-07
影响因子：
3.7
通讯作者：
Zhang, Zhidong
中科院分区：
文献类型：
--
作者：
Li, Mingze;Wang, Zhenhua;Zhang, Zhidong
Bi_2Se_3等拓扑绝缘体作为量子物质的一种奇异态，在小功率电子和光电子器件中具有潜在的应用前景。具有（001）取向的Bi2Se3纳米片或薄膜水平放置在衬底上，在过去几年中已经被广泛研究。在这里，我们报告的Bi2Se3纳米片的生长和光电探测响应的p型硅衬底上垂直取向。这种非常规的结构和几何形状为光吸收提供了更高的有效吸收长度，并通过Bi2Se3纳米片的拓扑保护表面态或基面提供了可能更有效的光载流子传输。通过Cu掺杂补偿Bi_2Se_3的本征缺陷，当Cu掺杂浓度为3.87at. %.我们的工作为探索具有非常规取向的拓扑绝缘体薄膜的优异光电性能铺平了道路。
As an exotic state of quantum matter, topological insulators like Bi2Se3 have potential applications in low power electronic and optoelectronic devices. Bi2Se3 nanoflakes or films with (001) orientation, laying horizontally on substrates, have been studied extensively in the past few years. Here we report the growth and photodetection response of Bi2Se3 nanoplates oriented vertically on the p-type Si substrate. This unconventional structure and geometry provide a higher effective absorption length for light absorption and potentially more efficient photocarrier transport via the topologically protected surface states or the basal plane of Bi2Se3 nanoplates. By compensating Bi2Se3 native defects with Cu doping, we achieve an increase of 42 times in the photocurrent when the Cu concentration is 3.87 at. %. Our work paves a way for exploring the excellent optoelectronic properties of topological insulator films with an unconventional orientation.