Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method
Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method
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DOI：
10.7567/1347-4065/ab39be
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发表时间：
2019-08
影响因子：
1.5
通讯作者：
Y. Tomioka;Y. Ozaki;H. Inaba;T. Ito
中科院分区：
文献类型：
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作者：
Y. Tomioka;Y. Ozaki;H. Inaba;T. Ito
用区熔法提纯的不同Si掺杂的β-Ga_2 O_3晶体，研究了宽禁带半导体的电阻率ρ和霍尔系数RH。对于传导电子密度<1018 cm−3的晶体，低温下的n型传导被杂质传导所取代，这在ρ（-RH）与温度倒数1/T的关系图中表现为肩部（最大值），就像补偿的n型锗一样。对未掺杂晶体中残留杂质阳离子的分析表明，除了2 ppm的Si之外，Al、Mg和Fe也残留在晶体中。虽然Fe和Mg本身是深受主，但迁移率的分析表明，它们的作用类似于电离受主补偿施主Si。研究表明，杂质阳离子间的补偿效应是影响β-Ga 2 O3输运性质的重要因素。
The resistivity ρ and Hall coefficient RH of a wide gap semiconductor β-Ga2O3 have been investigated using crystals with various Si-doping that were purified by the zone-melting process. For the crystals with the conduction electron density <∼1018 cm−3, the n-type conduction is replaced with the impurity conduction at low temperatures, which is manifested as a shoulder (maximum) in the plot of the ρ (–RH) versus the reciprocal temperature 1/T, like the compensated n-type germanium. The analysis of the residual impurity cations in a non-doped crystal indicates that besides the 2 ppm of Si the Al, Mg, and Fe are remained in the crystal. Although the Fe and Mg are deep acceptors themselves, analysis of the mobilities indicates that they act like ionized acceptors compensating donors Si. This study demonstrates that the compensation effects between impurity cations are the essential factors for the transport properties in β-Ga2O3.