Electrical Properties of Zn-Mg-RE (RE=Y, Gd) Icosahedral Quasicrystals.
Electrical Properties of Zn-Mg-RE (RE=Y, Gd) Icosahedral Quasicrystals.
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Zn-Mg-RE (RE=Y, Gd) 二十面体准晶体的电学性质。
DOI：
10.1143/jpsj.66.1097
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发表时间：
1997
影响因子：
1.7
通讯作者：
and Y. Nogami
中科院分区：
文献类型：
--
作者：
N. Yamamoto;R. Kondo;H. Maeda;and Y. Nogami
测量了 Zn-Mg-RE (RE=Y, Gd) 二十面体相的电阻率和磁阻。 Zn56Mg36Y8块状样品、Zn62Mg30Y8退火带状样品和Zn55Mg35.5Gd9.5退火带状样品的电阻率分别为1 mΩcm、0.3 mΩcm和0.3 mΩcm。所有样品的电阻率从4.2 K到273 K下降了5∼7%。在低温下，Zn-Mg-Y的电导率服从T1/2依赖性，而Zn-Mg-Gd的电阻率服从lnT依赖性，其中Gd原子具有磁矩。在Zn-Mg-Y中，磁阻为负值且对温度不敏感，而在Zn-Mg-Gd中，磁阻在低场范围内为正值，在高场范围内变为负值，且在较低温度下其幅度更大。这些结果可以通过电子-电子相互作用、弱局域化和s-d交换相互作用的理论来解释。
The electrical resistivity and the magnetoresistance have been measured for icosahedral phases of Zn–Mg–RE (RE=Y, Gd). Electrical resistivities of bulk samples of Zn56Mg36Y8, annealed ribbon samples of Zn62Mg30Y8and annealed ribbon samples of Zn55Mg35.5Gd9.5are 1 mΩcm, 0.3 mΩcm and 0.3 mΩcm, respectively. The resistivities of all the samples decrease by 5∼7% from 4.2 K to 273 K. At low temperatures, the conductivity of Zn–Mg–Y obeysT1/2dependence, while the resistivity of Zn–Mg–Gd obeys lnTdependence, where Gd atoms bear magnetic moments. In Zn–Mg–Y, the magnetoresistance is negative and insensitive to temperature, while in Zn–Mg–Gd it is positive in a low field range and becomes negative at high field with its magnitude larger at lower temperature. These results are interpreted by the theories of electron-electron interaction, weak localization and s-d exchange interaction.