On the Lifetime-Equivalent Defect Density: Properties, Application, and Pitfalls
On the Lifetime-Equivalent Defect Density: Properties, Application, and Pitfalls
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关于寿命等效缺陷密度：属性、应用和陷阱
DOI：
10.1109/jphotov.2019.2922470
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发表时间：
2019
影响因子：
3
通讯作者：
A. Herguth
中科院分区：
文献类型：
--
作者：
A. Herguth
结合晶体硅体过剩载流子寿命变化的研究，给出了等效寿命缺陷密度(或称有效、相对或归一化缺陷密度)的基本概念、推导和定义，并讨论了它们与注入和温度的一般关系。由于等效寿命缺陷密度的概念通常被应用于光诱导现象，通过模拟的方法展示了它在与硼-氧相关的光降解和再生中的应用，以及当铁-硼配对/解离、光和高温诱导的退化和再生、或与表面相关的降解等现象叠加时的陷阱。最后，将等效寿命缺陷密度的概念推广到表面现象。
The basic idea, derivation, and definition of the lifetime-equivalent defect density (alternatively termed as effective, relative, or normalized defect density) in the context of studies on changes of bulk excess charge carrier lifetime in crystalline silicon is presented, and the general dependencies on injection and temperature are discussed. As the concept of lifetime-equivalent defect density is often applied to light-induced phenomena, the application to boron–oxygen-related light-induced degradation and regeneration is demonstrated by means of simulations, as well as the pitfalls, when other phenomena like iron–boron pairing/dissociation, light- and elevated-temperature-induced degradation and regeneration, or surface-related degradation are superimposed. Finally, the concept of lifetime-equivalent defect density is extended to surface phenomena.