Josephson-type effect in resonant-tunneling heterostructures.
Josephson-type effect in resonant-tunneling heterostructures.
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DOI：
10.1103/physrevb.44.11924
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发表时间：
1991-12
期刊：
影响因子：
--
通讯作者：
S. Gurvitz
中科院分区：
文献类型：
--
作者：
S. Gurvitz
我们研究了双阱半导体异质结构中的共振隧穿现象，这可能揭示一些宏观层次上的量子力学现象。研究了这些系统中的约瑟夫森型效应。我们得到一个恒定的和一个交变偏置电压下的谐振电流的简单表达式。它示出的情况下，出现在一个恒定的偏置谐振电流的交流振荡是指数衰减。然而，直流谐振电流的行为类似于约瑟夫森超电流：它随着偏置电压迅速下降，但当叠加交流电压时，它在对应于夏皮罗台阶的点处达到峰值。然而，峰的高度显示出与约瑟夫森结的情况不同的对偏置电压的依赖性。讨论了在室温下观察约瑟夫森型效应的可能性。
We consider resonant-tunneling penetration through double-well semiconductor heterostructures, which may reveal some quantum-mechanical phenomena at the macroscopic level. The Josephson-type effects in these systems are investigated. We obtain simple expressions for the resonant current under a constant and an alternating bias voltage. It is shown that ac oscillations in the resonant current appearing in the case of a constant bias are exponentially damped. Nevertheless, a dc resonant current behaves similarly to the Josephson supercurrent: it rapidly decreases with bias voltage, but it peaks at the points corresponding to Shapiro steps when an alternating voltage is superimposed. Yet the heights of the peaks show a different dependence on the bias voltage than in the case of a Josephson junction. The possibility of observing the Josephson-type effect at room temperatures is discussed.