Native oxidation of ultra high purity Cu bulk and thin films
Native oxidation of ultra high purity Cu bulk and thin films
复制标题
DOI：
10.1016/j.apsusc.2006.05.063
复制
发表时间：
2006-12-30
影响因子：
6.7
通讯作者：
Isshiki, A.
中科院分区：
文献类型：
--
作者：
Iijima, J.;Lim, J. -W.;Isshiki, A.
利用角分辨X射线光电子能谱(AR-XPS)和椭圆偏振光谱(SE)研究了铜的微观结构和纯度对自然氧化的影响。在-50V的衬底偏压下，离子束沉积制备的高质量铜膜(V-S=-50V的IBD铜膜)的抗氧化性与超高纯铜(UHP-Cu)块材相当，而没有衬底偏压的铜膜(V-S=0V的IBD铜膜)的抗氧化性较低。超高功率铜块体和两种薄膜上Cu2O层的生长基本遵循对数速率规律。而在V-S=0和-50V时，IBD铜薄膜上氧化层的生长分别在320h和800h后偏离了对数速率规律。偏离对数定律的原因是经过一段时间后在Cu2O层上形成了CuO。(C)2006爱思唯尔B.V.保留所有权利。
The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V-s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V-s = 0 V) showed lower oxidation resistance. The growth of Cu2O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V-s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu2O layer after a critical time. (c) 2006 Elsevier B.V. All rights reserved.