Ferroelectric properties of Pb(Zi, Ti)O3 capacitor with thin SrRuO3 films within both electrodes
Ferroelectric properties of Pb(Zi, Ti)O3 capacitor with thin SrRuO3 films within both electrodes
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DOI：
10.1143/jjap.39.2110
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发表时间：
2000-04-01
期刊：
影响因子：
--
通讯作者：
Tanaka, S
中科院分区：
文献类型：
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作者：
Morimoto, T;Hidaka, O;Tanaka, S
研究了两电极均有SrRuO3（SRO）薄膜的Pb(Zi, Ti)O-3 （PZT）电容器的铁电性能。10nm厚度的SRO薄膜在高温下也能显著改善电学性能，如开关电荷（Qsw）、迟滞曲线的饱和特性和压印性能。还应该注意的是，在5v下进行5 x 10（10）次读/写循环后，没有Qsw退化。试验后未观察到漏电流增加。透射电镜（TEM）和电子色散x射线（EDX）分析结果也表明，Sr和Ru在PZT薄膜中没有扩散。Qsw的增加可以用该模型来解释，该模型中存在于SRO薄膜中的过量氧离子由于外电场而漂移到PZT中，它们填补了PZT中靠近界面的氧空位。我们证实了所提出的电极结构是实现高可靠性铁电随机存取存储器（FRAMs）的关键。
Ferroelectric properties of a Pb(Zi, Ti)O-3 (PZT) capacitor with thin SrRuO3(SRO) films within both electrodes were investigated in detail. Thin SRO films of 10 nm thickness markedly improve the electrical performance, such as switching charge (Qsw), saturation characteristics of the hysteresis curve and imprint performance even at an elevated temperature. It should also be noted that there was no Qsw degradation after 5 x 10(10) read/write cycles at 5 V. No leakage current increase after the test was observed. The results of transmission electron microscope (TEM and electron dispersive X-ray (EDX) analyses also showed that there is no diffusion of either Sr or Ru in the PZT film. The Qsw increase can be explained by the model in which excess oxygen ions existing in the SRO films drift into the PZT due to the external electric field where they fill the oxygen vacancies in the PZT near the interfaces. We confirmed that the proposed electrode structure was a key to realizing highly reliable ferroelectric random access memories (FRAMs).