Revised theoretical limit of subthreshold swing in field-effect transistors
Revised theoretical limit of subthreshold swing in field-effect transistors
复制标题
修改了场效应晶体管亚阈值摆幅的理论极限
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
C. Enz
中科院分区：
文献类型：
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作者：
A. Beckers;F. Jazaeri;C. Enz
这封信报告了MOSFET亚阈值摆幅的温度依赖性极限，该极限在深低温下偏离玻尔兹曼极限。在临界温度以下，导出的极限饱和到与温度无关且与带尾的程度成比例的值。由于在不同类型的MOSFET中普遍观察到饱和（无论尺寸或半导体材料如何），因此带尾归因于半导体体积中晶格的有限周期性，并且在较小程度上归因于额外的晶格扰动，例如缺陷或无序。
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the extent of a band tail. Since the saturation is universally observed in different types of MOSFETs (regardless of dimension or semiconductor material), the band tail is attributed to the finite periodicity of the lattice in a semiconductor volume, and to a lesser extent to additional lattice perturbations such as defects or disorder.