Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
复制标题
重Al掺杂4H-SiC外延层中Al掺杂导致传导机制从能带向可变范围跳变传导的转变
DOI：
10.7567/1347-4065/ab3c2c
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发表时间：
2019
影响因子：
1.5
通讯作者：
H. Okumura
中科院分区：
文献类型：
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作者：
Hideharu Matsuura;Akinobu Takeshita;T. Imamura;Kota Takano;Kazuya Okuda;Atsuki Hidaka;S. Ji;K. Eto;K. Kojima;Tomohisa Kato;S. Yoshida;H. Okumura
我们研究了在高掺Al的4H-SiC薄膜中，随着Al浓度（CAl）的增加，从能带和最近邻跳频（NNH）传导到变范围跳频（VRH）传导的转变机制。在CAl为1.8 × 1020 cm−3的样品中，高温和低温下的主要传导机制分别是带和VRH传导，而在CAl值较低的样品中，分别是带和NNH传导，而在CAl值较高的样品中，VRH传导在整个测量温度范围内（20-600 K）占主导地位。
We investigate the transition of the conduction mechanism from band and nearest-neighbor hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped 4H-SiC epilayers with increasing Al concentration (CAl). In a sample with CAl of 1.8 × 1020 cm−3, the dominant conduction mechanisms at high and low temperatures were band and VRH conduction, respectively, whereas in samples with lower CAl values they were band and NNH conduction, respectively, and in samples with higher CAl values VRH conduction was dominant over the entire range of measurement temperatures examined (20–600 K).