Phosphorus Doping in Si1-x-yGexCy Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH4–GeH4–CH3SiH3–PH3–H2 Gas System
Phosphorus Doping in Si1-x-yGexCy Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH4–GeH4–CH3SiH3–PH3–H2 Gas System
复制标题
使用 SiH4–GeH4–CH3SiH3–PH3–H2 气体系统通过低压化学气相沉积进行 Si1-x-yGexCy 外延生长中的磷掺杂
DOI：
10.1143/jjap.40.2697
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
J. Murota
中科院分区：
文献类型：
--
作者：
Doohwan Lee;T. Noda;Hyun;M. Sakuraba;T. Matsuura;J. Murota
研究了Si（100）衬底上Si_（1-x-yGexCy）（0 <$x <$0.78，0 <$y <$0.016）外延生长中磷掺杂的影响。实验得到了在限制表面反应的条件下生长的掺磷Si_（1-x）-yGexCy外延材料中Ge含量、C含量、P浓度（CP）、沉积速率和沉积条件之间的关系，并用改进的Langmuir吸附反应模型进行了解释.还给出了不同Ge和C含量的P掺杂Si 1-x-yGexCy中载流子浓度、CP和电阻率之间的关系。具有低Ge和C分数（x ≤ 0.48和y ≤ 0.0046）的P掺杂的Si 1-x-yGexCy的载流子浓度在约2×1020 cm-3以下几乎等于CP。随着Ge和C分数的增加，膜具有独立于CP的电惰性P原子。薄膜中C（y = 0.0048）的存在降低了霍尔迁移率。
Phosphorus doping in Si1-x-yGexCy (0≦x≦0.78, 0≦y≦0.016) epitaxial growth on Si(100) at 550°C by ultraclean hot-wall low-pressure chemical vapor deposition using a SiH4–GeH4–CH3SiH3–PH3–H2 gas system is investigated. The relationship among the Ge, the C fraction, the P concentration (CP), the deposition rate, and the deposition conditions in the P-doped Si1-x-yGexCy epitaxial growth under the surface reaction-limited regime is experimentally obtained, and is explained by the modified Langmuir-type adsorption and reaction scheme. The relationships among the carrier concentration, the CP, and the resistivity in the P-doped Si1-x-yGexCy for various Ge and C fractions are also presented. The carrier concentration of the P-doped Si1-x-yGexCy with low Ge and C fractions (x≦0.48 and y≦0.0046) is nearly equal to CP below approximately 2×1020 cm-3. With increasing Ge and C fractions, the film has electrically inactive P atoms independent of CP. The existence of C (y≧0.0048) in the film reduces the Hall mobility.