Intra-acceptor hole relaxation in Be delta-doped GaAs/AiAs multiple quantum wells
Intra-acceptor hole relaxation in Be delta-doped GaAs/AiAs multiple quantum wells
复制标题
Be δ 掺杂 GaAs/AiAs 多量子阱中受主内空穴弛豫
作者：
宋迎新;郑卫民;刘静;初宁宁;李素梅
