High-mobility electronic transport in ZnO thin films
High-mobility electronic transport in ZnO thin films
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DOI：
10.1063/1.2193727
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发表时间：
2006-04
影响因子：
4
通讯作者：
大友 明
中科院分区：
文献类型：
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作者：
大友 明
对在半绝缘Mg0.15Zn0.85O高温退火缓冲层上生长的ZnO薄膜的电子输运特性进行了系统研究。在激光分子束外延生长过程中，作为生长温度和氧压的函数，可以看到最优生长条件下，本征缺陷的总浓度被认为是降低的。对于最合格的薄膜，在100K和300K下分别记录了5000cm2V−1s−1和440cm2V−1s−1的霍尔迁移率，残余电子密度分别为4×1014和9×1015cm−3。
A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000cm2V−1s−1 at 100K and 440cm2V−1s−1 at 300K were recorded with the residual electron densities of 4×1014 and 9×1015cm−3, respectively.