Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers
Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers
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DOI：
10.1063/1.3512868
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发表时间：
2010-11
影响因子：
3.2
通讯作者：
N. Taoka;W. Mizubayashi;Y. Morita;S. Migita;H. Ota;S. Takagi
中科院分区：
文献类型：
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作者：
N. Taoka;W. Mizubayashi;Y. Morita;S. Migita;H. Ota;S. Takagi
具有硅钝化层 (PL) 的 Ge p 沟道金属绝缘体半导体场效应晶体管 (p-MISFET) 迁移率增强的物理根源已经得到系统研究。这是通过比较模拟的栅极至沟道电容与栅极电压 (Cgc-Vg) 曲线和测量的 Cgc-Vg 曲线来估计绝缘体/Si/Ge 界面处的载流子分布，以及在不同温度下测量迁移率来阐明 Ge 反型层中空穴的散射机制来完成的。通过比较Cgc-Vg曲线发现，沟道主要是通过插入Si PL而在Si/Ge界面处形成的，而不是在绝缘体/Si界面处形成的。结果表明，在高有效场（Eeff）区域，由于沟道区域从绝缘体/Si界面到Si/Ge界面的变化而导致的表面粗糙度散射的减少对迁移率的增强有显着贡献。它也被发现在低效率寄存器中...
The physical origins of the mobility enhancement in Ge p-channel metal-insulator-semiconductor field effect transistors (p-MISFETs) with Si passivation layers (PLs) have been systematically investigated. This was done through a comparison between simulated gate-to-channel capacitance versus gate voltage (Cgc-Vg) curves and measured Cgc-Vg curves to estimate carrier distributions at the insulator/Si/Ge interfaces, and mobility measurements at various temperatures to clarify scattering mechanisms of holes in the Ge inversion layers. It was found, from the comparison of the Cgc-Vg curves, that the channels are mainly formed at the Si/Ge interfaces by inserting the Si PLs, and not the insulator/Si interfaces. It was revealed, in the high effective field (Eeff) region, that the reduction in surface roughness scattering due to the change in the channel region from the insulator/Si interfaces to the Si/Ge interfaces has a significant contribution to the mobility enhancement. It was also found in the low Eeff reg...