ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES
ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES
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DOI：
10.1103/physrevb.29.1807
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发表时间：
1984-01-01
影响因子：
3.7
通讯作者：
PHELPS, DE
中科院分区：
文献类型：
--
作者：
GREENE, RL;BAJAJ, KK;PHELPS, DE
使用变分法计算由夹在两个半无限 Ga 1− x Al x As 层之间的单块 GaAs 板组成的量子阱结构中万尼尔激子的能级。由于沿这种量子阱结构生长轴的对称性降低以及界面处能带不连续性的存在，GaAs价带的简并性被消除，从而产生两个激子系统，即重空穴激子和轻空穴激子。对于几个势垒高度值，计算了这两个激子系统的基态和一些低激发态的结合能值，作为 GaAs 量子阱尺寸的函数，并讨论了它们的行为。由此获得的结果也与可用的实验数据进行了比较。讨论了该计算中各种近似值的可靠性。
Energy levels of Wannier excitons in a quantum-well structure consisting of a single slab of GaAs sandwiched between two semi-infinite layers of Ga 1− x Al x As are calculated with the use of a variational approach. Owing to lowering of symmetry along the axis of growth of this quantum-well structure and the presence of energy-band discontinuities at the interfaces, the degeneracy of the valence band of GaAs is removed, leading to two exciton systems, namely, the heavy-hole exciton and the light-hole exciton. The values of the binding energies of the ground state and of a few lowlying excited states of these two exciton systems are calculated as a function of the size of the GaAs quantum well for several values of the heights of the potential barriers and their behavior is discussed. The results thus obtained are also compared with the available experimental data. The reliability of the various approximations made in this calculation is discussed.