Low temperature and self-catalytic growth of tetragonal SnO nanobranch
Low temperature and self-catalytic growth of tetragonal SnO nanobranch
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DOI：
10.1016/j.matlet.2010.02.028
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发表时间：
2010-05
影响因子：
3
通讯作者：
J. Shin;J. Song;Y. H. Kim;Hyun‐Min Park
中科院分区：
文献类型：
--
作者：
J. Shin;J. Song;Y. H. Kim;Hyun‐Min Park
采用<110>低温气相传输法在硅衬底上垂直生长了具有单晶四元结构的SnO枝状纳米结构。SnO纳米枝的生长机制为V-L-S（vapor-liquid-solid）生长的多步过程，Sn蒸气在衬底上的初始冷凝和聚结形成SnO缓冲层，随后是SnO纳米枝的自催化V-L-S生长。其次，锡蒸气在纳米主干的（110）表面上的额外冷凝导致纳米枝在<110>相同的自催化V-L-S过程的方向上外延生长。
Branched nanostructures of SnO with a single crystalline tetragonal structure in the <110> longitudinal direction were vertically grown on silicon substrates using a low-temperature vapor transport process. The growth mechanism of SnO nanobranches was revealed as a multi-step process of V–L–S(vapor–liquid–solid) growth; initial condensation and coalescence of Sn vapors on the substrate formed a SnO buffer layer and was followed by the self-catalytic V–L–S growth of SnO nanotrunks. Secondly, additional condensation of Sn vapors on the (110) surface of the nanotrunk led to epitaxial growth of nanobranches in the <110> direction by the same self-catalytic V–L–S process.