Fabrication of GeO2 layers using a divalent Ge precursor
Fabrication of GeO2 layers using a divalent Ge precursor
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DOI：
10.1063/1.2723684
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发表时间：
2007-04-16
影响因子：
4
通讯作者：
Skatova, A. A.
中科院分区：
文献类型：
--
作者：
Perego, M.;Scarel, G.;Skatova, A. A.
高质量和完美化学计量的GeO2层是基于高介电常数氧化物/Ge（100）的替代器件中有希望实现的中间层。在这项工作中，作者报告了使用二价Ge前驱体与O-3结合的原子层沉积方法生长GeO2薄膜。薄膜由光滑且具有完美化学计量的GeO2组成。污染程度极低。所制备的GeO2薄膜带隙为5.81 +/- 0.04 eV。在GeO2/Ge异质结处的传导和价带偏移分别为0.6 +/- 0.1和4.5 +/- 0.1 eV。
Good quality and perfectly stoichiometric GeO2 layers are promising interlayers to be implemented in alternative devices based on high dielectric constant oxide/Ge(100). In this work, the authors report on the growth by atomic layer deposition of GeO2 films using a divalent Ge precursor combined with O-3. The films are composed of smooth and perfectly stoichiometric GeO2. The contamination level is extremely low. The deposited GeO2 films have a band gap of 5.81 +/- 0.04 eV. The conduction and valence band offsets at the GeO2/Ge heterojunction are found to be 0.6 +/- 0.1 and 4.5 +/- 0.1 eV, respectively.