Reactive ion etching of piezoelectric Pb(ZrxTi1−x)O3 in a SF6 plasma
Reactive ion etching of piezoelectric Pb(ZrxTi1−x)O3 in a SF6 plasma
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SF6 等离子体中压电 Pb(ZrxTi1−x)O3 的反应离子蚀刻
DOI：
10.1116/1.581984
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
R. Palmer
中科院分区：
文献类型：
--
作者：
M. Bale;R. Palmer
用纯SF6气体证明了Pb(ZrxTi1−x)O3 （PZT）的反应离子刻蚀。研究了刻蚀速率随射频（rf）功率和工艺压力的变化，获得了高达160 nm min - 1的刻蚀速率。腐蚀速率对等离子体参数的依赖似乎表明了离子诱导的机制。利用原子力显微镜对光刻胶的腐蚀过程进行了分析。研究发现，在高功率和高工艺压力下，抗蚀剂表面的粗化速度加快。在此基础上，讨论了光阻掩膜PZT蚀刻工艺。
Reactive ion etching of Pb(ZrxTi1−x)O3 (PZT) is demonstrated using pure SF6 gas. The variation of the etch rate with radio frequency (rf) power and process pressure has been investigated and rates up to 160 nm min−1 were obtained. The dependence of the etch rate on the plasma parameters seems to indicate an ion-induced mechanism. Analysis of photoresist erosion in the process has been performed using an atomic force microscope. It has been found that roughening of the resist surface is accelerated when high rf powers and high process pressures are used. Based on these studies a recipe for PZT etching with a photoresist mask is discussed.