Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer
Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer
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DOI：
10.1103/physrevlett.120.167201
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发表时间：
2018-04-16
影响因子：
8.6
通讯作者：
Attane, J. P.
中科院分区：
文献类型：
--
作者：
Noel, P.;Thomas, C.;Attane, J. P.
本文报道了利用自旋泵浦实验，在室温下观察到应变碲化汞中自旋到电荷的电流转换。我们发现，HgCdTe势垒可以用来保护HgTe不与铁磁体直接接触，从而获得非常高的转化率，反Edelstein长度可达2.0+/-0.5 nm。发现HgTe层厚度对转换效率的影响与自旋霍尔效应系统的预期有很大不同。这些测量与电阻率与温度的关系表明，这些高转化率是由于HgTe表面态的自旋动量锁定特性造成的。
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.