In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells
In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells
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DOI：
10.1002/adma.201807435
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发表时间：
2019-02
影响因子：
29.4
通讯作者：
F. Tan;H. Tan;M. Saidaminov;Mingyang Wei;Mengxia Liu;Anyi Mei;Peicheng Li;Bo Zhang;Chih-Shan Tan-Chi
中科院分区：
文献类型：
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作者：
F. Tan;H. Tan;M. Saidaminov;Mingyang Wei;Mengxia Liu;Anyi Mei;Peicheng Li;Bo Zhang;Chih-Shan Tan-Chi
近年来，有机-无机杂化钙钛矿太阳能电池（PSC）的能量转换效率迅速提高；然而，它们仍然遭受钙钛矿吸收层和电荷传输层之间界面处的界面复合和电荷提取损失。据报道，原位背接触钝化（BCP）可减少钙钛矿吸收剂和空穴传输层（HTL）之间的界面和提取损失。在钙钛矿/HTL 界面引入了一层薄薄的非掺杂半导体聚合物，结果表明，与之前研究的基于绝缘体的钝化剂相比，使用半导体聚合物允许使用相对较厚的钝化层。结果表明，钙钛矿和聚合物钝化层之间的平带排列实现了高光电压和填充因子：所得的 BCP 在 1.53 eV 带隙 PSC 中实现了 1.15 V 的光电压和 83% 的填充因子，从而使平面太阳能电池的效率达到 21.6%。
Organic–inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge–transport layers. Here, in situ back‐contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits—in contrast with previously studied insulator‐based passivants—the use of a relatively thick passivating layer. It is shown that a flat‐band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.