Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
复制标题
具有微型场板 T 栅极和 156 GHz fT 的分级沟道 GaN HEMT 的功率扩展
DOI：
10.1109/led.2021.3075926
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发表时间：
2021
影响因子：
4.9
通讯作者：
P. Fay
中科院分区：
文献类型：
--
作者：
J. Moon;B. Grabar;J. Wong;D. Chuong;E. Arkun;Didiel V. Morales;Peter Chen;Christopher Malek;David Fanning;N. Venkatesan;P. Fay
我们报道了60 nm栅长渐变沟道AlGaN/GaN HEMT的制作与一个小型场板T栅。该器件表现出一个外在的f<sub>T</sub>和<inline-formula><tex-math notation="LaTeX">$\text{f}_{\text {MAX}}$</tex-math></inline-formula>的156 GHz和308 GHz，分别。在60 nm的栅极长度，f<sub>T</sub> *Lg的9.4 GHz<inline-formula><tex-math notation="LaTeX">$\ast \mu \text{m}$是</tex-math></inline-formula>传统的缩放短栅长AlGaN/GaN HEMT相媲美。由于最小的电流崩溃，梯度沟道GaN HEMT表现出线性RF功率缩放高达5.5 W/mm在30 GHz。这导致了创纪录的858 GHz<inline-formula><tex-math notation="LaTeX">$\ast {W}$</tex-math></inline-formula>/mm的Ga极性GaN器件的<inline-formula><tex-math notation="LaTeX">$\text{f}_{\text {T}}~\ast $</tex-math></inline-formula>功率密度积，表明该器件架构有望用于mmW放大器。
We report 60-nm gate-length graded-channel AlGaN/GaN HEMTs fabricated with a mini-field-plate T-gate. The devices exhibit an extrinsic f<sub>T</sub> and <inline-formula> <tex-math notation="LaTeX">$\text{f}_{\text {MAX}}$ </tex-math></inline-formula> of 156 GHz and 308 GHz, respectively. At 60-nm gate length, the f<sub>T</sub>*Lg of 9.4 GHz<inline-formula> <tex-math notation="LaTeX">$\ast \mu \text{m}$ </tex-math></inline-formula> is comparable to that of conventional scaled short gate-length AlGaN/GaN HEMTs. Due to minimal current collapse, the graded-channel GaN HEMTs demonstrated linear RF power scaling up to 5.5 W/mm at 30 GHz. This results in a record <inline-formula> <tex-math notation="LaTeX">$\text{f}_{\text {T}}~\ast $ </tex-math></inline-formula>power density product of 858 GHz<inline-formula> <tex-math notation="LaTeX">$\ast \text{W}$ </tex-math></inline-formula>/mm for Ga-polar GaN devices, indicating the promise of this device architecture for mmW amplifiers.