Anisotropic Strain Introduction into Si/Ge Hetero Structures
Anisotropic Strain Introduction into Si/Ge Hetero Structures
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Si/Ge 异质结构中引入各向异性应变
DOI：
10.1149/07508.0563ecst
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and Kiyokazu Nakagawa
中科院分区：
文献类型：
--
作者：
Kentarou Sawano;Shiori Konoshima;Junji Yamanaka;Keisuke Arimoto;and Kiyokazu Nakagawa
我们表明，各向异性应变可以诱导到Si/Ge异质结构，通过选择性离子注入衬底上生长它们。结果表明，SiGe缓冲层的应变弛豫是通过沿沿着一个方向产生失配位错而发生的，该方向垂直于选择性离子注入的条形图案。结果，SiGe缓冲层适应各向异性（单轴）应变状态，其是高度稳定和可控的，因为弛豫是基于位错的塑性变形。在应变控制的SiGe缓冲层上，可以生长单轴应变Si/Ge沟道，并且非常适用于高迁移率互补金属氧化物半导体（CMOS）沟道。
We show that anisotropic strain can be induced into Si/Ge hetero structures by growing them on selectively ion-implanted substrates. It is found that strain relaxation of SiGe buffer layers takes place through generation of misfit dislocations along one direction, perpendicular to the selectively ion-implanted stripe patterns. As a result, the SiGe buffer layers accommodate anisotropic (uniaxial) strain states, which are highly stable and controllable since the relaxation is based on the plastic deformation by the dislocations. On the strain controlled SiGe buffers, uniaxially strained Si/Ge channels can be grown and are highly applicable to high-mobility complementary metal oxide semiconductor (CMOS) channels.