PHOTO-LUMINESCENCE OF GAN EPITAXIAL LAYERS
PHOTO-LUMINESCENCE OF GAN EPITAXIAL LAYERS
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DOI：
10.1088/0022-3719/15/2/020
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发表时间：
1982-01-01
期刊：
影响因子：
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通讯作者：
KLINGSHIRN, C
中科院分区：
文献类型：
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作者：
DAI, R;FU, S;KLINGSHIRN, C
在大量的低温样品中研究了GaN非掺杂外延层的特征光致发光谱线。在光致发光光谱的高能量部分中观察到的谱线被称为I1、I2、I3和I4，其中光子能量减小。I1位于3.476 ± 0.002eV，I4位于3.311 ± 0.002eV，为首次报道。还测量了它们对温度和激发强度的依赖性。这些线被认为是由于束缚激子发射在本地化的中心，并在晶体中的缺陷和氮空位所造成的施主-受主对重组。热激活能分别为Δ E1 = 1.9meV、Δ E3 = 3.4meV和Δ E4 = 14.4meV。建议GaN中最低横向自由激子的新值为3.479+或-0.002 eV。
The characteristic photoluminescence lines in GaN undoped epitaxial layers have been investigated in a large number of samples at low temperature. The lines observed in the high-energy part of the photoluminescence spectra are called I 1, I 2, I 3 and I 4 with decreasing photon energy. I 1, situated at 3.476+ or-0.002 eV and I 4 at 3.311+ or-0.002 eV are reported here for the first time. Their dependences on temperature and excitation intensity have also been measured. These lines are proposed to be due to bound exciton emission at localised centres and to donor-acceptor pair recombination caused by imperfections and nitrogen vacancies in the crystal. The thermal activation energies are determined as Delta E 1= 1.9 meV, Delta E 3= 3.4 meV and Delta E 4= 14.4 meV. A new value for the lowest transverse free exciton in GaN at 3.479+ or-0.002 eV is suggested.