A Method for Attaching Thiol Groups Directly on a Silicon (111) Substrate
A Method for Attaching Thiol Groups Directly on a Silicon (111) Substrate
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DOI：
10.3866/pku.whxb201605182
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发表时间：
2016-09-15
影响因子：
10.9
通讯作者：
Brodus, DaShan
中科院分区：
文献类型：
--
作者：
Zhang Xiao-Ning;Hollimon, Valerie;Brodus, DaShan
硅表面是有前途的界面，因为它们具有机械和化学弹性，能够在水和有机环境中抵抗磨损，并显示出良好的电性能。有许多方法可用于硅表面的硫醇化，特别是通过连接含有末端-SH部分的分子。这些方法通常具有反应时间长的缺点。在目前的工作中，我们开发了一种替代的方法，通过引入终端硫醇基团直接到硅表面上的硅表面的硫醇化。所开发的湿化学工艺依赖于氯化，然后表面硫醇化，并且需要更少的时间用于在硅衬底上接枝硫醇基团。每一步后，采用X射线光电子能谱（XPS）和接触角测量进行表面表征。
Silicon surfaces are promising interfaces because they are mechanically and chemically resilient, able to resist wear in aqueous and organic environments, and display good electrical properties. There are a number of methods that are used to thiolate a silicon surface, notably through the attachment of molecules that contain terminal -SH moieties. These methods usually suffer from long reaction times. In the present work, we developed an alternative method for thiolation of a silicon surface by introducing terminal thiol groups directly onto the silicon surface. The developed wet chemical process relies on chlorination and then surface thiolation and requires less time for grafting thiol groups on the silicon substrate. X-ray photoelectron spectroscopy (XPS) and contact angle measurement were employed for surface characterization after each step.