Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer
Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer
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DOI：
10.1063/1.1577827
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发表时间：
2003-05-26
影响因子：
4
通讯作者：
Hopkinson, M
中科院分区：
文献类型：
--
作者：
Liu, HY;Hopkinson, M
提出了一种用于调整1.3 μ m InAs/GaAs量子点的结构和光学性质的InAlAs和GaAs应变缓冲层。通过调整InAlAs-GaAs缓冲层中GaAs的厚度，InAs量子点密度从1.6 × 10 ~（10）cm ~（-2）增加到2.8 × 10 ~（10）cm ~（-2），量子点基态和第一激发态之间的能量分离从84 meV提高到93 meV。我们还研究了InAlAs量子点周围的InAlAs层的光致发光强度的影响，随着InAlAs层的厚度增加，在6 nm的InAlAs-InGaAs复合盖层，并没有观察到负面影响。(C)2003年，美国物理学会。
A combined InAlAs and GaAs strained buffer layer was presented to tailor the structural and optical properties of 1.3-m m InAs/GaAs quantum dots. This growth technique exhibits an increment of InAs quantum-dot density from 1.6x10(10) to 2.8x10(10) cm(-2) and an improvement of energy separation between the quantum-dot ground and first-excited states from 84 to 93 meV upon adjusting the thickness of GaAs in InAlAs-GaAs buffer layer. We also investigate the effect of an InAlAs layer surrounding InAs quantum dots on photoluminescence intensity with increasing the thickness of InAlAs layer in a 6-nm InAlAs-InGaAs composite cap layer, and no negative effect has been observed. (C) 2003 American Institute of Physics.