3C-SiC Monocrystals Grown on Undulant Si(001) Substrates
3C-SiC Monocrystals Grown on Undulant Si(001) Substrates
复制标题
在起伏的 Si(001) 衬底上生长的 3C-SiC 单晶
DOI：
10.1557/proc-742-k1.6
复制
发表时间：
2002
期刊：
影响因子：
--
通讯作者：
N. Hatta
中科院分区：
文献类型：
--
作者：
H. Nagasawa;K. Yagi;T. Kawahara;N. Hatta
一种减少3C-SiC平面缺陷的新技术是在“波状Si”衬底上生长3C-SiC，其表面形成沿[110]和[ 110 ]方向取向的反向斜坡。在3C-SiC生长的初始阶段，阶梯流外延发生在衬底的每个斜面上，减少了反相边界。然后，（111）和（111）面中的层错通过与反层错结合而逐渐消失，而平行于（111）和（111）的层错消失。独立的3C-SiC在其电性能方面表现出各向异性。结合X射线衍射研究结果，讨论了电性能各向异性的成因。
A novel technique to reduce planar defects in 3C-SiC is to grow it on “undulant-Si” substrates, on which the surface forms countered slopes oriented in the [110] and [ 110 ] directions. In the initial stage of 3C-SiC growth, step flow epitaxy occurs on each slope of the substrate, reducing the anti-phase boundaries. Then, the stacking faults in the ( 1 11) and (1 1 1) planes are gradually annihilated by combining with counter-stacking faults, while those parallel to (111) and ( 11 1) vanish. The freestanding 3C-SiC exhibits anisotropy in its electrical properties. The origin of the anisotropy in electrical properties is discussed by referring to the results of X-ray diffraction study.