Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence
Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence
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DOI：
10.7567/1882-0786/ab0db8
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发表时间：
2019-04
影响因子：
2.3
通讯作者：
W. Yi;Jun Chen;S. Higuchi;T. Sekiguchi
中科院分区：
文献类型：
--
作者：
W. Yi;Jun Chen;S. Higuchi;T. Sekiguchi
随着大尺寸高质量GaN衬底的发展，需要对GaN衬底的均匀性和缺陷分布进行晶圆级分析。我们展示了基于成像阴极发光技术的2英寸GaN衬底晶片的映射。宏观坑缺陷的尺寸从微米到毫米不等的可视化，并根据其光学和结构特性分为三种类型。考虑到衬底生长中的小面生长，讨论了不同类型的凹坑缺陷的形成机制。
With the progress in large-size high-quality GaN substrates, wafer-scale analysis is needed to evaluate homogeneity and defect distribution. We demonstrate the mapping of a 2 inch GaN substrate wafer based on the imaging cathodoluminescence technique. Macro pit defects with sizes varying from microns to millimeters are visualized and classified into three types according to their optical and structural properties. The formation mechanisms of the different types of pit defects are discussed with consideration of the facet growth involved in substrate growth.