Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates
Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates
复制标题
DOI：
10.1143/jjap.45.l659
复制
发表时间：
2006-07-01
期刊：
影响因子：
--
通讯作者：
Mukai, Takashi
中科院分区：
文献类型：
--
作者：
Funato, Mitsuru;Ueda, Masaya;Mukai, Takashi
我们展示了蓝色，绿色，琥珀色InGaN/GaN发光二极管（LED）的半极性{11（2）在bar 2}体GaN衬底的制造。本研究中使用的{11（2）over tilde 2} GaN衬底是通过从通过氢化物气相外延生长的c取向GaN块体晶体切割而制备的。LED的尺寸为320 × 320 μ m（2），并封装在环氧树脂中。在20 mA的驱动电流下，蓝光LED的输出功率和外量子效率（EQE）分别为1.76 mW和3.0%，绿色LED为1.91 mW和4.1%，琥珀色LED为0.54 mW和1.3%。最大电流为200 mA时，获得的最大输出功率为19.0 mW（蓝色）、13.4 mW（绿色）和1.9 mW（琥珀色），而最大EQE在140 mA（蓝色）时为4.0%，在0.2 mA（绿色）时为4.9%，在1 mA（琥珀色）时为1.6%。确认了发射光沿{11（2）over bar 2}方向沿着偏振，反映了{11（2）over bar 2}面的低晶体对称性。
We demonstrate the fabrication of blue, green, and amber InGaN/GaN light-emitting diodes (LEDs) on semipolar {11 (2) over bar2} bulk GaN substrates. The {11 (2) over tilde2} GaN substrates used in this study are produced by cutting out from a c-oriented GaN bulk crystal grown by hydride vapor epitaxy. The LEDs have a dimension of 320 x 320 mu m(2) and are packed in an epoxide resin. The output power and external quantum efficiency (EQE) at a driving current of 20 mA are 1.76 mW and 3.0%, respectively, for the blue LED, 1.91 mW and 4.1% for the green LED, and 0.54 mW and 1.3% for the amber LED. The maximum output powers obtained with a maximum current of 200 mA are 19.0 mW (blue), 13.4 mW (green), and 1.9 mW (amber), while the Maximum EQEs are 4.0% at 140 mA (blue), 4.9% at 0.2 mA (green), and 1.6% at I mA (amber). It is confirmed that the emission light is polarized along the {11 (2) over bar2} direction, reflecting the low crystal symmetry of the {11 (2) over bar2} plane.