Mask-less ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes.
Mask-less ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes.
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DOI：
10.1364/oe.17.023522
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发表时间：
2009-12
期刊：
影响因子：
3.8
通讯作者：
D. Elfström;B. Guilhabert;J. McKendry;S. Poland;Z. Gong;D. Massoubre;E. Richardson;B. Rae;G. Valentine;G. Blanco-Gomez;E. Gu;J. Cooper;R. Henderson;M. Dawson
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文献类型：
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作者：
D. Elfström;B. Guilhabert;J. McKendry;S. Poland;Z. Gong;D. Massoubre;E. Richardson;B. Rae;G. Valentine;G. Blanco-Gomez;E. Gu;J. Cooper;R. Henderson;M. Dawson
我们报告了一种紫外 (UV) 光刻和直接写入方法，其中曝光图案和剂量均由互补金属氧化物半导体 (CMOS) 控制的微像素化发光二极管阵列决定。使用两个背对背显微镜物镜将来自演示器 8 x 8 氮化镓微像素 LED 的 370 nm 紫外光投射到光致抗蚀剂覆盖的基板上，从而实现受控缩小。在目前的设置中，该系统能够在直径约为 8 微米的圆形光斑中为每个成像像素提供高达 8.8 W/cm2 的功率。我们展示了用正性光刻胶和负性光刻胶写入的示例结构。
We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.