Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys
Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys
复制标题
GexSi1−x/Si(110) 异质结构中应变弛豫的定量分析以及 GexSi1−x 合金中堆垛层错能的准确测定
DOI：
10.1063/1.108068
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发表时间：
1992
影响因子：
4
通讯作者：
L. Feldman
中科院分区：
文献类型：
--
作者：
R. Hull;J. Bean;L. Peticolas;D. Bahnck;B. Weir;L. Feldman
报道了GexSi1−x/Si110异质结应变弛豫的定量理论和实验分析。结果表明，在临界成分以上，刃型a/6<112>Shockley位错的临界厚度小于60°a/2<110>全位错的临界厚度。对于外延层厚度h<；Hx，在a/6<112>位错边缘的净(过剩)应力较大，而对于h≳Hx，在60°a/2<110>位错上净(过剩)应力较大。通过计算Hx对单位面积γ层错能的敏感依赖关系，实验确定了γ=65±10mJ m−2时x∼为0.3GexSi1−x.
We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1−x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60° a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, h<hx, but greater on the 60° a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m−2 for x∼0.3 in GexSi1−x.