SURFACE SELF-DIFFUSION OF SI ON SI(001)
SURFACE SELF-DIFFUSION OF SI ON SI(001)
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DOI：
10.1016/0039-6028(92)90968-c
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发表时间：
1992-05-01
期刊：
影响因子：
1.9
通讯作者：
LAGALLY, MG
中科院分区：
文献类型：
--
作者：
MO, YW;KLEINER, J;LAGALLY, MG
用扫描隧道显微镜定量测定了Si（001）表面上Si原子的表面扩散系数。该方法依赖于计算在给定沉积剂量和给定沉积速率下，在不同底物温度下形成的岛的数量。在最简单的情况下，扩散系数与岛屿密度的关系为N与D-1/3的比例，与各步剥蚀带宽度的关系为W（DZ）与D1/6的比例。扩散活化能E(a) = 0.67 +/- 0.08 eV, D0 = 10(-3) +/- 1 cm2。扩散具有高度的各向异性，沿二聚体行扩散方向快。
The surface diffusion coefficient of Si atoms on a Si(001) surface is quantitatively determined using scanning tunneling microscopy. The method rests on counting the number of islands that form at various substrate temperatures for a given deposited dose at a given deposition rate. In the simplest situation, the diffusion coefficient is related to the island density by N proportional-to D-1/3 and to the width of denuded zones at steps by W(DZ) proportional-to D1/6. The activation energy for diffusion is E(a) = 0.67 +/- 0.08 eV and D0 congruent-to 10(-3) +/- 1 cm2. The diffusion is highly anisotropic, with the fast direction along the dimer rows.