Temperature dependence of an AlInP 63Ni betavoltaic cell
Temperature dependence of an AlInP 63Ni betavoltaic cell
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DOI:
10.1063/1.4964504
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发表时间:
2016-10-14
影响因子:
3.2
通讯作者:
Barnett, A. M.
中科院分区:
文献类型:
--
作者:
Butera, S.;Lioliou, G.;Barnett, A. M.
In this paper, the performance of an Al0.52In0.48P Ni-63 radioisotope cell is reported over the temperature range of -20 degrees C to 140 degrees C. A 400 mu m diameter p(+)-i-n(+) (2 mu m i-layer) Al0.52In0.48P mesa photodiode was used as a conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the ideality factor decreased. The effects of the temperature on the key cell parameters were studied in detail showing that the open circuit voltage, the maximum output power, and the internal conversion efficiency decreased when the temperature was increased. At -20 degrees C, an open circuit voltage and a maximum output power of 0.52V and 0.28 pW, respectively, were measured. Published by AIP Publishing.