Fine structure in the Er-related emission spectrum from Er-Si-O matrices at room temperature under carrier mediated excitation
Fine structure in the Er-related emission spectrum from Er-Si-O matrices at room temperature under carrier mediated excitation
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DOI：
10.1016/s0022-2313(02)00648-8
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发表时间：
2003-05
影响因子：
3.6
通讯作者：
H. Isshiki;A. Polman;T. Kimura
中科院分区：
文献类型：
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作者：
H. Isshiki;A. Polman;T. Kimura
用ErCl/乙醇溶液在硅表面包覆Er-Si-O晶体基质(ESO)，然后在氧气中和Ar中进行两步退火处理，合成了Er-Si-O晶体基质。在室温下观察到了Er3+相关光致发光(PL)谱(线宽小于4 meV)的精细结构。荧光精细结构表明Er离子中4f电子能级发生斯塔克分裂。室温下的光致发光激发谱显示了Er离子的载流子激发。这些结果表明，ESO在半导体硅基中具有稳定而均匀的结构，并且在光学上非常活跃。从Stark分裂的角度讨论了Er离子的局域环境。
Er–Si–O crystalline matrices (ESO) have been synthesized by coating the Si surface with an ErCl/ethanol solution, followed by a two-step annealing process, first in oxygen and second in argon. Fine structures of the Er3+-related photoluminescence (PL) spectrum (line width less than 4meV) have been observed at room temperature. The PL fine structures indicate Stark splitting of the 4f-electron energy levels in erbium ions. The PL excitation spectrum at room temperature shows the carrier-mediated excitation of Er ions. These results suggest that ESO are of a stable and homogeneous structure in semiconducting silicon matrix and are optically very active. The local environment of erbium ions is discussed from the Stark splitting.