Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
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DOI：
10.1364/cleo_at.2012.jw3l.2
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发表时间：
2011-12
期刊：
2012 Conference on Lasers and Electro-Optics (CLEO)
影响因子：
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通讯作者：
David S. Meyaard;Guan-Bo Lin;Q. Shan;Jaehee Cho;E. F. Schubert;Hyun Wook Shim;Min-ho Kim;C. Sone
David S. Meyaard;Guan-Bo Lin;Q. Shan;Jaehee Cho;E. F. Schubert;Hyun Wook Shim;Min-ho Kim;C. Sone
中科院分区：
其他
文献类型：
--
作者：
David S. Meyaard;Guan-Bo Lin;Q. Shan;Jaehee Cho;E. F. Schubert;Hyun Wook Shim;Min-ho Kim;C. Sone

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我们提供的实验证据表明，载流子浓度和迁移率的不对称会导致 GaInN/GaN pn 结 LED 的效率下降。在很宽的温度范围内测量了效率下降，显示在 80 K 时效率下降增加。
We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.