Thermal Characterization Method of Power Semiconductors Based on H-Bridge Testing Circuit
Thermal Characterization Method of Power Semiconductors Based on H-Bridge Testing Circuit
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DOI：
10.1109/tpel.2019.2900253
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发表时间：
2019-02
影响因子：
6.7
通讯作者：
Ye Zhu;Ke Ma;X. Cai
中科院分区：
文献类型：
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作者：
Ye Zhu;Ke Ma;X. Cai
本文提出了一种基于H桥测试电路的功率半导体器件热特性测试方法，以及相应的控制和测量方法。该方法使被测功率半导体器件工作在开关模式下，更接近实际应用。由于开关损耗的存在，类似的结温范围可以用比传统测试方法低得多的加热电流来实现。此外，电流控制器被用来切断加热电流迅速，使所提出的方法可以近似一个理想的阶跃功率损耗，从而有助于更准确地估计热阻。此外，所提出的测试方法允许多个DUT和重复测量，以考虑参数分布和不确定性。通过实验测试验证了该方法的可行性、控制性和一些电气行为。
This letter proposes a thermal characterization method of power semiconductor devices based on an H-bridge testing circuit, as well as its corresponding control and measurements. In the proposed method, the power semiconductor devices under test (DUTs) operate under the switching mode, which is closer to the practical use. Due to the presence of switching loss, similar ranges of junction temperature can be achieved with much lower heating current than the one in the conventional testing method. Besides, a current controller is used to cut off the heating current rapidly, so that the proposed method can approximate an ideal step power loss and thus contribute to more accurate estimation of thermal impedance. In addition, the proposed testing method enables multiple DUTs and repeated measurements, in order to take parameter distribution and uncertainty into account. The feasibility, control, and some electrical behaviors of the proposed method are verified through experimental tests.