Breakdown Phenomena in SD Cards Exposed to Proton Irradiation
Breakdown Phenomena in SD Cards Exposed to Proton Irradiation
复制标题
SD 卡暴露在质子照射下的击穿现象
DOI：
10.2322/tastj.12.31
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Terakura
中科院分区：
文献类型：
--
作者：
S. Kimura;Yoshihiro Kasuya;M. Terakura
商用现货（COTS）技术越来越多地用于实现紧凑、低成本和高性能的车载设备。COTS技术在在轨应用前，必须在在轨环境中验证其性能，并考虑辐射等因素。本文介绍了SD卡在γ射线和质子辐照下的辐照试验结果。在测试过程中，我们发现特定的质子辐照击穿现象，而极端的伽马射线辐照没有产生显着的影响。此外，即使在整个照射过程中关闭靶，也会发生质子现象。辐照引起的异常是不可逆的。
Commercial off-the-shelf (COTS) technologies are increasingly used to realize compact, low-cost and high-performance on-board equipment. Before a COTS technology can be adopted in orbit, its performance must be verified in the orbit environment, where factors such as radiation must be considered. This paper presents the irradiation test results of SD cards exposed to gamma ray and proton irradiation. During the testing, we find breakdown phenomena specific to proton irradiation whereas extreme gamma ray irradiation exerts no significant effect. Moreover, the proton phenomena occurs even when the target is switched off throughout the irradiation. The anomalies induced by the irradiation are irreversible.
采用 COTS 技术制造的处理单元的高性能图像采集
影响因子：
3.6
作者：
Shinichi Kimura;Akira Miyasaka;Ryu Funase;Hirotaka Sawada;Nobuomi Sakamoto;Naoki Miyashita
通讯作者：
Naoki Miyashita