Silicon nanopillars formed by reactive ion etching using a self-organized gold mask

Silicon nanopillars formed by reactive ion etching using a self-organized gold mask
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DOI:
10.1238/physica.topical.079a00263
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发表时间:
1999-01-01
期刊:
影响因子:
2.9
通讯作者:
Tuovinen, C
Tuovinen, C
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Ovchinnikov, V;Malinin, A;Tuovinen, C

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采用反应离子刻蚀法在含氟等离子体中制备了硅纳米柱。通过对薄的金箔进行原位加热,形成由金岛组成的自组织金掩膜。用扫描电镜对其结构进行了表征。
Silicon nanopillars were fabricated by using reactive ion etching in a fluorinated plasma at room temperature. A self-organized gold mask consisting of gold islands was formed by in situ heating of a thin gold him. Structures were characterized by scanning electron microscopy.