Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene
Epitaxy of Single-Crystalline GaN Film on CMOS-Compatible Si(100) Substrate Buffered by Graphene
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石墨烯缓冲的 CMOS 兼容 Si(100) 衬底上的单晶 GaN 薄膜外延
DOI：
10.1002/adfm.201905056
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发表时间：
2019-07-23
影响因子：
19
通讯作者：
Shen, Bo
中科院分区：
文献类型：
--
作者：
Feng, Yuxia;Yang, Xuelin;Shen, Bo
在Si（100）衬底上制造单晶氮化镓（GaN）器件，与主流互补金属氧化物半导体电路兼容，是下一代高性能电子和光电子学的先决条件。然而，单晶GaN在Si（100）衬底上的直接外延仍然具有挑战性，因为Si（100）的表面域不对称，这可能导致具有双畴结构的多晶GaN。在这里，利用单晶石墨烯作为缓冲层，展示了单晶GaN薄膜在Si（100）衬底上的外延。用NH3原位处理石墨烯可以生成sp(3) C-N键，然后触发氮化物的成核。单原子厚度的单晶石墨烯提供了平面内的驱动力，使所有GaN畴对齐形成单晶。表面科学勘探和第一性原理计算进一步阐明了成核机制和区域演化。这项工作为将氮化镓器件集成到硅基集成电路中奠定了基础，也拓宽了氮化物在非常规非晶或柔性衬底上外延的选择。
Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing single-crystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH3 can generate sp(3) C-N bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.