Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al x Ga 1− x As y P 1− y Step‐Graded Buffer Structures
Epitaxial GaInP/GaAs/Si Triple‐Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al
x
Ga
1−
x
As
y
P
1−
y
Step‐Graded Buffer Structures
复制标题
透明变质 Al x Ga 1− x As y P 1− y 阶梯缓冲结构实现 25.9% AM1.5g 效率的外延 GaInP/GaAs/Si 三结太阳能电池
DOI：
10.1002/solr.202000763
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发表时间：
2021
期刊：
影响因子：
7.9
通讯作者：
F. Dimroth
中科院分区：
文献类型：
--
作者：
Markus Feifel;D. Lackner;J. Schön;J. Ohlmann;J. Benick;G. Siefer;F. Predan;M. Hermle;F. Dimroth
SiTaSol”根据资助协议号 727497。M.F. 的工作得到了德国环境基金会 DBU 的奖学金支持。作者要感谢 S. Stättner、R. Koch、F. Schätzle、A. Leimenstoll、S. Seitz、O. Höhn、C. Harmel、N. Jung、D. Chojiniak、M. Schachtner、E. Fehrenbacher、 E. Schäffer 和 F. Martin 在 Projekt DEAL 启用和组织的开放获取资金方面做出的贡献。
SiTaSol ” under grant agree-ment no. 727497. The work of M.F. was supported by the scholarship from the German Environmental Foundation DBU. The authors would like to thank S. Stättner, R. Koch, F. Schätzle, A. Leimenstoll, S. Seitz, O. Höhn, C. Harmel, N. Jung, D. Chojiniak, M. Schachtner, E. Fehrenbacher, E. Schäffer, and F. Martin for their contribution regarding the fabrication and characterization of the solar cells. Open access funding enabled and organized by Projekt DEAL.