Single-grain growth in Si film by chevron-shaped cw laser beam scanning
Single-grain growth in Si film by chevron-shaped cw laser beam scanning
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DOI：
10.7567/apex.9.025503
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发表时间：
2016-02-01
影响因子：
2.3
通讯作者：
Morito, Shigekazu
中科院分区：
文献类型：
--
作者：
Yeh, Wenchang;Yamazaki, Satoki;Morito, Shigekazu
用人字形连续激光束扫描SiO_2上60 nm的Si膜，在其中生长出长450 μ m、宽5-6 μ m的单颗粒，该连续激光束是由一束线性激光束通过一种新颖的单面Dove棱镜形成的。晶体在生长方向和法向都没有任何优势取向。取向以0.47-0.51度/μ m的速率沿正向绕横向旋转，这表明膜表面的晶格常数比膜底部的晶格常数大0.049-0.053%。(C)2016日本应用物理学会。
A single grain with a length of 450 mu m and a width of 5-6 mu m was grown in a 60 nm Si film on SiO2 by scanning a chevron-shaped cw laser beam, which was formed by passing a linear laser beam through a novel one-sided Dove prism. The crystal did not have any dominant orientations in both the growth and normal directions. The orientation rotated about the transverse direction at a rate of 0.47-0.51 degrees/mu m in the forward direction, which suggests that the lattice constant at the film surface was 0.049-0.053% larger than that at the film bottom. (C) 2016 The Japan Society of Applied Physics.