Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors
Fabrication, annealing, and regrowth of wafer-scale nanoporous GaN distributed Bragg reflectors
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DOI：
10.1016/j.scriptamat.2018.06.040
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发表时间：
2018-11-01
影响因子：
6
通讯作者：
Ma, Jin
中科院分区：
文献类型：
--
作者：
Yang, Xiaokun;Xiao, Hongdi;Ma, Jin
采用草酸溶液中的电化学腐蚀方法制备了由晶格匹配的极性（0001）GaN和纳米多孔GaN层组成的圆片级分布布拉格反射器（DBR），具有高反射率（>90%）和宽光谱阻带宽度（约80 nm）。DBR在950摄氏度下的退火由于质量传输过程导致峰值反射率的显著增强（>95%）。在此基础上，在DBR模板上生长了InGaN基发光二极管。蚀刻模板上的LED结构的光致发光强度是标准LED的四倍。(C)2018 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
A wafer-scale distributed Bragg reflector (DBR), which consists of perfectly lattice-matched polar (0001) GaN and nanoporous GaN layers, was fabricated by electrochemical etching method in an oxalic acid solution, presenting high-reflectivity (>90%) and wide spectral stop-band width (similar to 80 nm). Annealing of the DBR at 950 degrees C leads to a significant enhancement in the peak reflectivity (>95%) due to the mass transport process. According to the above mentioned research, InGaN-based light emitting diodes (LEDs) were regrown on the DBR templates. The photoluminescence intensity of the LED structure on the etched template was four times higher than for standard LED. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.