Operation of SiGe bipolar technology at cryogenic temperatures
Operation of SiGe bipolar technology at cryogenic temperatures
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SiGe 双极技术在低温下运行
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
J. Cressler
中科院分区：
文献类型：
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作者：
J. Cressler
最近引入的硅锗（SiGe）合金已被证明对于在低温下实现优异的双极晶体管性能，同时保持传统上与硅（Si）制造相关的成本和产量优势是非常有前景的。在本文中，我们回顾了硅锗异质结双极晶体管（SiGe HBT）的特点，使他们特别适合于低温操作。使用直流和交流的实验结果，我们还解决了与配置文件优化的SiGe HBT的低温环境，低温SiGe BiCMOS技术的潜力相关的问题，并提出了液氦温度操作的SiGe HBT的新结果。我们的结论是，SiGe HBT技术为未来需要最高性能水平的低温数字、模拟和混合信号应用提供了重要的杠杆作用
The recent introduction of silicon-germanium (SiGe) alloys has proven exceptionally promising for achieving excellent bipolar transistor performance at cryogenic temperatures, while maintaining the cost and yield advantages traditionally associated with silicon (Si) manufacturing. In this paper we review the features of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) which make them particularly suitable for cryogenic operation. Using dc and ac experimental results, we also address the issues associated with profile optimization of SiGe HBTs for the cryogenic environment, the potential for cryogenic SiGe BiCMOS technologies, and present new results on liquid-helium temperature operation of SiGe HBTs. We conclude that SiGe HBT technology offers significant leverage for future cryogenic digital, analog and mixed-signal applications requiring the highest levels of performance