Growth of bulk ZnSe crystals — recent developments†
Growth of bulk ZnSe crystals — recent developments†
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块状 ZnSe 晶体的生长——最新进展†
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
E. Krause
中科院分区：
文献类型：
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作者：
D. Siche;H. Hartmann;K. Böttcher;E. Krause
本文从历史回顾和生长方法的一般比较开始，讨论了基板质量 ZnSe 晶体的晶种气相生长。在优化的生长条件下，与熔体生长相反，在 SPVT 和 SCVT（晶种物理和化学气相传输）中制备无孪晶单晶。位错密度在远离晶种过渡区域的生长方向上降低至10 4 cm 2 。 SPVT 生长的晶体在显示激子发光和减少深能级发射的光学特性方面是更好的晶体。对于同质外延的应用，具有最低缺陷密度的 SCVT 生长的晶体似乎更优越。
Starting with a historical review and a general comparison of growth methods, the paper deals with the seeded vapour growth of substrate-quality ZnSe crystals. Under optimized growth conditions, in contrast to the growth from the melt, in SPVT and SCVT (seeded physical and chemical vapour transport) twin-free single crystals are prepared. The dislocation density decreases down to 10 4 cm 2 in growth direction away from the seed transition region. SPVT-grown crystals are the better ones with respect to optical properties showing exciton luminescence and decreasing deep level emission. For the application in homoepitaxy, the SCVT-grown crystals with lowest defect densities seem to be superior.