Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation
Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation
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DOI：
10.1109/16.915658
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发表时间：
2001-04
影响因子：
3.1
通讯作者：
P. Zhao;H. Cui;D. Woolard;K. Jensen;F. Buot
中科院分区：
文献类型：
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作者：
P. Zhao;H. Cui;D. Woolard;K. Jensen;F. Buot
从共振隧穿二极管（RTD）的数值模拟结果中提取了RTDs的等效电路参数。本文所采用的RTD模型为双势垒结构。系统地讨论了共振隧穿结构（RTS）参数，如势垒高度、量子阱宽度、间隔层宽度和势垒宽度对器件参数的影响。还讨论了器件温度对器件参数的影响。电子和声子之间的散射极大地影响器件参数，从而影响RTD的功能。给出了结构参数和器件温度对器件参数影响的物理解释。根据分析结果，提出了一种提高RTD振荡器最高频率的一般方法。
The equivalent circuit parameters of resonant tunneling diodes (RTD) are extracted from numerical simulation results for RTDs. The RTD models used in this paper are double barrier structures. The influence of the resonant tunneling structure (RTS) parameters, such as the height of barriers, the width of the quantum well, the width of the spacers, and the width of the barriers, on the device parameters are systematically discussed. The effects of device temperature on device parameters are also discussed. Scattering between electrons and phonons greatly affects device parameters and thereby the function of the RTDs. Physical explanations about how the structure parameters and device temperature influence the device parameters are provided. Based on the analysis results, a general way to get an RTD oscillator with a higher maximum frequency is suggested.