The CVD graphene transfer procedure introduces metallic impurities which alter the graphene electrochemical properties
The CVD graphene transfer procedure introduces metallic impurities which alter the graphene electrochemical properties
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DOI：
10.1039/c3nr05230c
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发表时间：
2014-01-01
期刊：
影响因子：
6.7
通讯作者：
Pumera, Martin
中科院分区：
文献类型：
--
作者：
Ambrosi, Adriano;Pumera, Martin
采用化学气相沉积（CVD）技术，以Ni和Cu为催化剂基底，可以制备出高质量的石墨烯薄膜。这样的合成过程总是需要进行后续的转移过程，以便消除金属基底并将石墨烯转移到所需的表面上。我们在这里表明，这样的转移过程会导致石墨烯膜被残留的Fe和Ni金属杂质严重污染。Fe污染来源于使用Fe基蚀刻溶液来溶解Ni（或Cu）基板，而残留的Ni（或Cu）是由于不完全的金属基板蚀刻。当被用作电极材料时，转移的石墨烯膜中这些金属杂质的存在极大地影响其电化学行为。
High quality graphene films can be fabricated by chemical vapor deposition (CVD) using Ni and Cu as catalytic substrates. Such a synthesis procedure always requires a subsequent transfer process to be performed in order to eliminate the metallic substrate and transfer the graphene onto the desired surface. We show here that such a transfer process causes significant contamination of the graphene film with residual Fe and Ni metal impurities. Fe contamination derives from the use of Fe-based etching solutions to dissolve Ni (or Cu) substrates, while residual Ni (or Cu) is due to an incomplete metal substrate etching. The presence of these metallic impurities within the transferred graphene film affects tremendously its electrochemical behavior when adopted as an electrode material.