1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
复制标题
InAs/GaAs 自组装量子点的 1.3 µm 室温发射
DOI：
10.1143/jjap.38.528
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发表时间：
1999
影响因子：
1.5
通讯作者：
P. Stavrinou
中科院分区：
文献类型：
--
作者：
R. Murray;D. Childs;S. Malik;Philip Siverns;C. Roberts;J. Hartmann;P. Stavrinou
我们研究了使用传统的固体源分子束外延（MBE）实现InAs/GaAs自组装量子点（QD）在1.3 μm处的强室温发射所需的生长条件。一个相对较高的衬底温度和非常低的生长速率（LGR）的结果在长波长的发射只有24毫电子伏的小线宽。原子力显微照片从未加盖的样品揭示了LGRQD和那些在更高的增长速度增长之间的几个差异。前者更大，尺寸更均匀，密度低约4倍。LGRQDs已被纳入p-i-n结构和强室温电致发光检测。量子点p-i-n二极管的光输出被发现是显着高于量子阱（QW）样品至少为电流密度高达0.5 kAcm-2。
We have investigated the growth conditions necessary to achieve strong room temperature emission at 1.3 µm for InAs/GaAs self-assembled quantum dots (QDs) using conventional solid source molecular beam epitaxy (MBE). A relatively high substrate temperature and very low growth rate (LGR) result in long wavelength emission with a small linewidth of only 24 meV. Atomic Force Micrographs obtained from uncapped samples reveal several differences between the LGRQDs and those grown at higher growth rates. The former are larger, more uniform in size and their density is lower by a factor of about 4. LGRQDs have been incorporated in p-i-n structures and strong room temperature electroluminescence detected. The light output of the QD p-i-n diodes is found to be significantly higher than a quantum well (QW) sample at least for current densities up to 0.5 kAcm-2.