Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements
Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements
复制标题
通过瞬态吸收测量研究 InAs 量子点的光学非线性特性
DOI：
10.1063/1.1582394
复制
发表时间：
2003
影响因子：
3.2
通讯作者：
K. Asakawa
中科院分区：
文献类型：
--
作者：
H. Nakamura;S. Nishikawa;S. Kohmoto;K. Kanamoto;K. Asakawa
通过瞬时吸收测量，实验验证了自组装InAs/GaAs量子点的光学非线性特性。通过传输漂白和抽运/探测测量，获得了13 fJ/μm2的饱和脉冲能量Ps和55ps的吸收恢复时间τr。由Ps和 r计算得到吸收饱和强度为2.5×10~4τW/cm~2。饱和脉冲能量高达一个数量级，小于或至少与报道的III-V化合物半导体量子阱中激子的值相当。根据吸收截面计算的偶极长度与InAs量子点的晶格常数具有相同的数量级。这一结果有望从实验上验证量子点显示出类似于增量函数的态密度。
The optical nonlinear properties of self-assembled InAs/GaAs quantum dots (QDs) were experimentally verified by means of transient absorption measurements. A saturation pulse energy Ps of 13 fJ/μm2 and an absorption recovery time τr of 55 ps were obtained from transmission bleaching and pump/probe measurements for a waveguide sample with ten-layer-stacked QDs. An absorption saturation intensity Is of 2.5×104 W/cm2, calculated from Ps and τr, was found. The saturation pulse energy is up to an order of magnitude smaller than, or at least comparable with, the reported values for excitons in quantum wells of III–V compound semiconductors. The dipole length, as calculated from the absorption cross section, is of the same order as the lattice constant of the InAs QDs. The results are expected to experimentally verify that QDs show a delta-function-like density of states.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H