PERPENDICULAR GIANT MAGNETORESISTANCE OF MICROSTRUCTURED FE/CR MAGNETIC MULTILAYERS FROM 4.2 TO 300 K
PERPENDICULAR GIANT MAGNETORESISTANCE OF MICROSTRUCTURED FE/CR MAGNETIC MULTILAYERS FROM 4.2 TO 300 K
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DOI：
10.1103/physrevlett.70.3343
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发表时间：
1993-05-24
影响因子：
8.6
通讯作者：
GIESBERS, JB
中科院分区：
文献类型：
--
作者：
GIJS, MAM;LENCZOWSKI, SKJ;GIESBERS, JB
高真空溅射Fe/Cr磁性多层膜的柱状微结构的制备使我们首次测量到垂直于膜面的电流为4.2~300K时的巨磁电阻，在4.2K下，Fe厚度为3 nm，Cr厚度为1 nm的多层膜的磁阻为108%。研究了不同铬厚度样品的垂直磁阻随温度的变化规律，并与面上电流测量结果进行了比较。
Fabrication of pillar-shaped microstructures of high vacuum sputtered Fe/Cr magnetic multilayers has enabled us to measure for the first time giant magnetoresistance with the current perpendicular to the film plane from 4.2 to 300 K. At 4.2 K we find a magnetoresistance of 108% for multilayers with a Fe thickness of 3 nm and a Cr thickness of 1 nm. The pronounced temperature dependence of the perpendicular magnetoresistance is studied for samples with different Cr thicknesses and compared with current-in-plane measurements.