Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
复制标题
用化学电势控制实现低阻的p型N-极性GaN
DOI：
10.35848/1882-0786/ac8273
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发表时间：
2022-08-01
影响因子：
2.3
通讯作者：
Sitar, Zlatko
中科院分区：
文献类型：
--
作者：
Rathkanthiwar, Shashwat;Szymanski, Dennis;Sitar, Zlatko
We report on low resistivity (1.1 Omega cm) in p-type bulk doping of N-polar GaN grown by metalorganic chemical vapor deposition. High nitrogen chemical potential growth, facilitated by high process supersaturation, was instrumental in reducing the incorporation of compensating oxygen as well as nitrogen-vacancy-related point defects. This was confirmed by photoluminescence studies and temperature-dependent Hall effect measurements. The suppressed compensation led to an order of magnitude improvement in p-type conductivity with the room-temperature hole concentration and mobility measuring 6 x 10(17) cm(-3) and 9 cm(2) V-1 s(-1), respectively. These results are paramount in the pathway towards N-polar GaN power and optoelectronic devices.
