Theory of semiconductor heterojunctions: The role of quantum dipoles
Theory of semiconductor heterojunctions: The role of quantum dipoles
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DOI：
10.1007/978-94-009-3073-5_22
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发表时间：
1984-10
影响因子：
3.7
通讯作者：
J. Tersoff
中科院分区：
文献类型：
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作者：
J. Tersoff
在任何半导体异质结都有一个与量子力学隧穿相关的界面偶极子，这取决于两个半导体之间的能带“排列”。当界面偶极响应占主导地位时，实际的频带不连续性必须接近于将给出零界面偶极的唯一值。一个简单的标准，提出了这个零偶极子阵容，这给出了很好的协议与实验波段阵容。强调了异质结能带排列与肖特基势垒形成之间的密切联系。
At any semiconductor heterojunction there is an interface dipole associated with quantum-mechanical tunneling, which depends on the band “lineup” between the two semiconductors. When the interface dipolar response dominates, the actual band discontinuity must be close to that unique value which would give a zero interface dipole. A simple criterion is proposed for this zero-dipole lineup, which gives excellent agreement with experimental band lineups. The close connection between heterojunction band lineups and Schottky barrier formation is emphasized.