Preparation of Cu2ZnSnS4 thin films by hybrid sputtering
Preparation of Cu2ZnSnS4 thin films by hybrid sputtering
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DOI：
10.1016/j.jpcs.2005.09.037
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发表时间：
2005-11
影响因子：
4
通讯作者：
Tooru Tanaka;T. Nagatomo;D. Kawasaki;M. Nishio;Q. Guo;A. Wakahara;A. Yoshida;H. Ogawa
中科院分区：
文献类型：
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作者：
Tooru Tanaka;T. Nagatomo;D. Kawasaki;M. Nishio;Q. Guo;A. Wakahara;A. Yoshida;H. Ogawa
为了制备cu2znsns4薄膜，采用了由两个溅射源和两个渗液电池组成的混合溅射系统。在不同的衬底温度下，通过金属元素的顺序沉积和S熔剂的退火制备cu2znsns4薄膜。在衬底温度高达400℃时，获得了具有化学计量成分的cu2znsns4薄膜，而在衬底温度超过450℃时，薄膜成分变得相当锌池。实验制备的cu2znsns4薄膜具有p型导电性，其光学吸收系数和带隙适合制作薄膜太阳能电池。
In order to fabricate Cu2ZnSnS4thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu2ZnSnS4films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu2ZnSnS4films with stoichiometric composition are obtained at the substrate temperature up to 400°C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450°C. The Cu2ZnSnS4film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu2ZnSnS4film prepared in this experiment are suitable for fabricating a thin film solar cell.